Abstract
A model study of the characteristic signatures of carrier-correlation effects on the excitonic differential absorption spectra in semiconductors is presented. Using an effectively one-dimensional tight-binding system Coulomb-induced carrier-correlations up to third-order in the optical field are treated without additional approximations. To illustrate the influence of the different many-body contributions excitonic differential absorption spectra are computed for various polarizations and pump-probe time delays. The simultaneous influence of energetic disorder and correlations on the differential absorption spectra is discussed. Also presented are numerical results for the case when the semiconductor system is placed inside a microcavity in the strong-coupling regime. It is shown that the correlations induce characteristic signatures in the normal mode spectra.
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