Abstract
The influence of carrier concentration on the minority carrier lifetime was studied in mid-wavelength infrared InAs/InAsSb superlattices. A significant correlation between the carrier concentration and the minority carrier lifetime was observed, with lifetime decreasing from 3.6μs to 1μs when increasing the carrier concentration from 2×1015cm−3 to 4.4×1015cm−3. From temperature dependence studies of the minority carrier lifetime, radiative recombination has been identified as the main recombination mechanism in these superlattices. The radiative recombination rate increases with carrier concentration which is consistent with our observations.
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