Abstract
We have studied the influence of the carrier concentration on the phase transition from ferromagnetic to paramagnetic in IV–VI diluted magnetic semiconductor Ge 1− x Mn x Te. While the magnetic phase transition of Ge 1− x Mn x Te with the high hole concentration (∼10 21 cm −3 ) is second order, Ge 1− x Mn x Te with the low hole concentration (∼10 19 cm −3 ) shows anomalous behavior compared to the theoretical model based on an uniformly ferromagnetic system. This suggests that the non-ferromagnetic region remains in Ge 1− x Mn x Te with lower hole concentration due to lack of long-range ferromagnetic order.
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