Abstract
We have studied the influence of the carrier concentration on the phase transition from ferromagnetic to paramagnetic in IV–VI diluted magnetic semiconductor Ge 1− x Mn x Te. While the magnetic phase transition of Ge 1− x Mn x Te with the high hole concentration (∼10 21 cm −3 ) is second order, Ge 1− x Mn x Te with the low hole concentration (∼10 19 cm −3 ) shows anomalous behavior compared to the theoretical model based on an uniformly ferromagnetic system. This suggests that the non-ferromagnetic region remains in Ge 1− x Mn x Te with lower hole concentration due to lack of long-range ferromagnetic order.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.