Abstract
In this work, the impact of three different buffer layers (CdS, ZnSe and ZnTe) on the performance of antimony selenide-based solar cells is analyzed and compared using a numerical simulator. The optimization was done to check the impact of absorber layer thickness, shallow acceptor density, the work function of back contact, radiative recombination coefficient, and temperature on the device by SCAPS-1D software. A thorough study of the various characteristics such as current density-voltage (I–V) and capacitance-voltage (C–V) was also carried out. The present work shows maximum efficiency when the Sb2Se3 absorber layer's optimum thickness is taken as 2 μm. When the three buffer layers, CdS, ZnSe, and ZnTe, are compared, ZnSe shows the highest efficiency. Maximum efficiency of 28.10%, 28.25%, and 25.01% for CdS, ZnSe, and ZnTe, respectively, was achieved by optimizing different parameters. This study will guide the researcher in further optimizing the parameters to obtain better Sb2Se3 based thin-film solar cells.
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