Abstract
We study low-temperature photoluminescence of undoped and boron δ-doped Si1−xGex/Si (x < 0.1) quantum wells with a thickness of 5 nm using CW and pulsed UV lasers. Many particle states in the nonequilibrium electron–hole system and the related recombination channels are revealed for both doped and undoped quantum wells. The influence of the band structure on the exciton-impurity complexes located in the quantum well (QW) centers is demonstrated. We find an anomalous quenching of the bound exciton emission line for the structure with a Ge content of 9.5% at low temperatures.
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