Abstract
High n-type conductivity of melt-grown gallium arsenide single crystals is usually achieved by doping with tellurium or silicon. The lower carrier concentration and Hall mobility in silicon-doped crystals is attributed to the formation of acceptor defects, in particular Si As - , the isolated gallium vacancy V Ga 3 - and the ( Si Ga – V Ga ) 2 - complex. We show that the contamination of the crystals with boron, which is unavoidable in growing techniques using a boron oxide encapsulant, is decisive for the degree of compensation. In highly n-doped gallium arsenide crystals boron is not only incorporated as the isoelectronic defect B Ga 0 . Additionally, high concentrations of B As 2 - and the negatively charged B As -donor complex are formed. These acceptors can dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and boron.
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