Abstract
ABSTRACTThe effects of sintering temperature, heating rate, holding time and sintering additive on the properties of single-phase indium tin oxide (ITO) target, prepared by normal pressure sintering method, were studied systematically. The results showed that target sintered at 1550°C for 10 h with a heating rate of 9°C/min had a higher relative density of 98.7% and a lower resistivity of 4×10–4 Ω.cm. When bismuth trioxide (Bi2O3) was added as a sintering additive, the density of target prepared at 1450°C improved significantly from 87.15% to 93.17%, while the resistivity increased to 73.65×10–4 Ω.cm due to poor electrical conductivity of Bi2O3. Moreover, after adding titanium dioxide (TiO2) as sintering additive, density of the target sintered at 1450°C improved from 87.15% to 91.43%. Importantly, the resistivity reached the minimum value of 3.05×10–4 Ω.cm at 1550°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
