Abstract
A systematic study of the microstructural features of SrBi2Ta2O9 (SBT) films prepared on Pt(1 1 1)/TiO2/SiO2/Si by pulsed laser deposition (PLD) and heat treated at different temperatures, is presented. The films heat treated during deposition have a temperature-induced preferential growth in the (1 1 5) orientation and reach the SBT crystal structure at 600 °C, free from undesired secondary phases. From transmission electron microscopy and X-ray diffraction analysis, the morphology of the SBT and the Bi2O3 crystals in the films are determined. Additionally, the non-oriented polycrystalline growth and the development of cracks in films deposited at the lowest temperature (300 °C) and then annealed at high temperatures are explained. It is seen in these films that once the Bi2O3 crystal phase is eliminated during the post-annealing process, the growth of the SBT crystals is linear at a rate of of 0.8 nm ° C-1. It is proposed, as a result of these studies, that a deposition temperature of at least 600 °C should be used to avoid the presence of crystalline Bi2O3 and cracking during the post-annealing treatment. © 2001 Kluwer Academic Publishers
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
