Abstract
Undoped and Be-doped InGaAsN layers were grown on GaAs substrates under the same growth conditions by radio frequency plasma-assisted molecular beam epitaxy. Increased tensile strain (Δ a/a=3×10 −3) was observed for Be-doped InGaAsN layers, compared to undoped InGaAsN layers. The strain is shown to originate from the increase in N composition related to Be incorporation, rather than solely from Be atoms substituting Ga atom sites (Be Ga). A possible reason is the high Be–N bond strength, which inhibits the loss of N from the growth surface during epitaxial growth, thereby increasing the N composition in the Be-doped InGaAsN layer.
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