Abstract
BaSi2 is considered a candidate for a light absorbing layer of a solar cell. The carrier type, carrier density, and photoresponsivity of undoped BaSi2 films depend on Ba-to-Si deposition rate ratios (RBa/RSi) during molecular beam epitaxy (MBE). In this study, we examined these properties of B-doped BaSi2 epitaxial films grown by MBE. We fabricated 0.5 μm thick lightly B-doped BaSi2 epitaxial films on Si (111) substrates at a substrate temperature of 600 °C. RBa/RSi was varied in the range 1.0–5.6. The B concentration was estimated to be 3 × 1016 cm−3. The p-type BaSi2 films were formed only in the range of RBa/RSi = 2.0–2.9, whereas BaSi2 formed with other values of RBa/RSi showed n-type conductivity. The photoresponsivity significantly depended on RBa/RSi, and reached values higher than those obtained for undoped BaSi2 films. We ascribed the enhancement of photoresponsivity to B atoms making defects inactive in B-doped BaSi2 films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
