Abstract
We theoretically investigate the polarization anisotropies of the interband transitions in strained quantum wells (QWs) grown on (110)-oriented substrates. We adopt the six-band effective-mass theory in which the spin-orbit split-off (SO) bands are included. The polarization-dependent optical matrix elements at the Brillouin zone center in GaxIn1-xP/Al0.5In0.5P QWs having various well widths grown on (110)GaAs are calculated as functions of Ga content x. Furthermore, the calculation is performed assuming various barrier heights, various spin-orbit split-off energies in the barrier layer, and the same strain in the barrier layers as in the well layer. It is shown that the SO band in the barrier layer critically influences on the behavior of the anisotropy of the optical matrix elements when the well width is narrow.
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