Abstract
Novel highly porous SiO 2 xerogels are being developed as low dielectric constant materials. For successful integration into DAMASCENE structures, the attractive electrical properties of these materials must not degrade as further cap and barrier layers are deposited and patterned. The influence of the deposition of PECVD SiO 2 cap and sputtered and MOCVD TiN barrier layers on the electrical properties of low k xerogel films was examined. FTIR was used to show that the pore surface methyl groups formed during HMDS treatment survive cap deposition. Electrical results indicate only small changes to the dielectric constant, leakage current density and field breakdown voltage after the cap was deposited. The deposition of the barrier layer was found to increase the dielectric constant of the xerogel by about 10–15% but not when the xerogel was capped first.
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