Abstract
A low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The interface characteristics of the MOS capacitors were investigated. The results show that, as the bombardment dose increases, the active dopant concentration near the oxide-semiconductor interface gets higher; maximum midgap energy increases; and interface-state density becomes lower. This simple technique is compatible with existing integrated-circuit processing, and can easily improve the interface characteristics, and therefore the electrical characteristics of MOS devices.
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