Influence of atomic hydrogen on intrinsic defects in CuInSe2

Abstract

ABSTRACTHydrogen with an energy of 300 eV was implanted into single crystalline CuInSe2samples at temperatures of 200 °C and 300 °C during implantation. We found that the hydrogen is not limited to the expected implantation depth but diffuses into the bulk of the sample. The hydrogen concentration ranges from 1019H/cm3in a depth of about 300 nm up to some 1021H/cm3next to the surface and resembles a diffusion profile. The hydrogen induced change of composition was not only at the surface, but also up to a depth of about 200 nm similar to that of the hydrogen profile. Mainly a Cu deficiency after hydrogen implantation could be observed and is explained as the passivation of VCuby hydrogen and the additional production of VCuby the induced band-bending.