Abstract
Two-dimensional heavy pnictogen chalcohalides, such as SbSI, SbSeI, and BiSI, are promising materials for solar energy harvesting (SEH) devices. In this paper, we report the influence of atmospheric conditions on the formation and structural properties of SbSI films fabricated under N2 and air atmospheres using a modified two-step method. Under N2 atmosphere, a preferentially (121)-oriented SbSI film without impurities formed. In contrast, under air atmosphere, a film with mixed crystalline phases of SbSI and secondary Sb2O3 formed. The Sb2O3 phase could be reduced by applying excess sulfur. These results provide a fundamental step toward optimizing the properties of chalcohalides for SEH device applications.
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