Abstract
Aluminum substituted La3Ta0.5Ga5.5O14 (LTGA) single crystals were grown via a floating zone (FZ) method in N2 or O2 gas flows. Also, LTGA single crystals that were grown using the Czochralski method were annealed in N2 or O2 gas flows. The resistivity of these crystals was measured in a temperature range from 300 to 700°C. The LTGA crystals that were grown/annealed in the N2 atmosphere showed higher resistivity by 1 order of magnitude as compared to those crystals grown/annealed in the O2 atmosphere. Based on these results, we suggest that the difference in resistivity is due to the concentration of oxygen vacancy and interstitial oxygen ions.
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