Influence of As-flux on As enhanced diffusion and residual defects

Abstract

The relation between enhanced diffusion coefficients, As fluxes and residual defects are given in this paper. When a low flux (2 μA cm −2) is used, after rapid thermal annealing (RTA), the enhanced diffusion coefficient is 50–80 times greater than that of normal diffusion. It agrees with the results of Pennycook et al 1. The enhanced diffusion coefficient increases with the increase of flux. If 45 μA cm −2 is used, after RTA, the diffusion coefficient is 47 times greater than that of 2 μA cm −2. The results show that the relation between diffusion coefficients and fluxes is exponential. An empirical formula is obtained from these data. The residual defect density increases with the increase in ion flux. The results of room temperature (RT) and liquid nitrogen temperature (LT) implantation are compared.