Abstract
The effect of arsenic vapor pressure during copper diffusion on deep level formation in silicon-doped gallium arsenide has been studied using photoinduced current transient spectroscopy. From the findings, models for the copper-related complexes in GaAs are identified. Capping effect of deposited copper layer is investigated. Deep levels with activation energies of 0.14 eV, 0.32 eV, and 0.45 eVhave been identified, which are attributed to CuGa, SiGa CuGa complex, and VAsCuGaVAs complex, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
