Abstract
Hydrogenated amorphous silicon films were deposited by ion-beam-assisted evaporation onto substrates maintained at 200°C. The gases introduced in the ion source were pure hydrogen or an argon–hydrogen mixture. The energy of the ions was varied by biasing the substrate. By combined infrared spectrometry and thermal desorption spectrometry experiments, it is inferred that the bombardment of the growing a-Si:H film by 300 eV hydrogen ions or 20 eV argon ions produces a densification of the material.
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