Abstract
Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2ratio of 25:1 have the minimum resistivity of 1.4×10-3Ω•cm and a high transmittance of above 92%.
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