Abstract
Various layouts of the anode of Junction Barrier Schottky (JBS) diodes are compared theoretically and it is found that the hexagonal honeycomb structure with 3-D symmetry offers the best figure of merit (FOM). Proportional relationships between the various layouts are reported, using which we extend a fully analytical 2-D model for reverse biased field shielding in a JBS diode to the superior 3-D layouts. The effect of reducing implanted feature size is also analyzed as a trade-off between FOM and breakdown voltage capability.
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