Abstract
We study the annealing effect of highly oriented zinc oxide (ZnO) films grown by low-power dc-unbalanced magnetron sputtering (DC-UBMS). In this study, we compare the structural and electrical properties of thermal-annealed ZnO films (ann-ZnO) and as-growth ZnO films (ag-ZnO) by using x-ray diffraction (XRD), scanning electron microscopy (SEM) and RT66A standardized ferroelectric test system. We found that the ag-ZnO films and the ann-ZnO films show a high orientation in (101) plane. SEM images indicate that annealing treatment at 600°C in nitrogen ambient promote the surface atomics arrangement and convert a non-uniform ag-ZnO surface to relatively flat ann-ZnO film surface. Also confirm that the ag- ZnO and the ann-ZnO films have strong ferroelectric characteristics, while the values of remnant polarization and polarization saturation are almost similar. The electric coercivity (Ec) of the ann-ZnO film is larger than ag-ZnO films as an indication of structural defects elimination. Our results are beneficial for high energy electric-based storage devices with less depolarized structural systems.
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