Abstract
In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.
Highlights
Colloidal semiconductor quantum dots (QDs) have attracted extensive attention as candidates for next-generation display application owing to their unique properties, such as high color purity, narrow full width at half-maximum (FWHM), high photoluminescence quantum yield (PLQY), and simple fabrication process [1–12]
20.09% with a color co-ordinate (0.687, 0.309), which is the highest performance ever reported in red top-emission QD light-emitting diodes (QLEDs) structure with indium zinc oxide (IZO) electrode
A facile but effective method is proposed to improve the performance of quantum dot light-emitting diode (QLED) by tuning the charge injection between holes and electrons
Summary
Colloidal semiconductor quantum dots (QDs) have attracted extensive attention as candidates for next-generation display application owing to their unique properties, such as high color purity, narrow full width at half-maximum (FWHM), high photoluminescence quantum yield (PLQY), and simple fabrication process [1–12]. A number of approaches for fabrication of cadmium-based QD light-emitting diodes (QLEDs) have been demonstrated, including device structure, material synthesis, and ligand exchange [13–21]. It is because of that top-emission structure has favorable attributes for improving display performance, which include vesting the freedom of pixel and circuit design, increasing the aperture ratio, and lowering power consumption [22]. We utilized red top-emission QLED (made by using the all solution-processed device structure) with indium zinc oxide (IZO) as top electrode. 20.09% with a color co-ordinate (0.687, 0.309), which is the highest performance ever reported in red top-emission QLED structure with IZO electrode. HIL and HTL are the materials for the commercial product of organic light-emitting diodes (OLED). HIL is composed of PFSA (tetrafluoroethylene-perfluoro-3,6-dioxa-4-methyl-7-octenesulphonic acid copolymer), PEDOT:PSS
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