Abstract
Chemical and field-effect passivation of atomic layer deposition (ALD) Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
