Abstract
The Ga2O3 films were grown on an Al2O3 (0001) substrate by a radio frequency magnetron sputtering process, the obtained samples were annealed at 800 °C for 30 min in air and vacuum atmosphere, respectively. The effects of annealing atmosphere on the crystal structure, microstructure, transmittance and band gap of Ga2O3 thin films were investigated in detail. It can be seen from the X-ray diffraction spectrum (XRD) that the film annealed showed better crystallinity with a monoclinic structure and the structure analysis revealed a clear out-of-plane orientation of β-Ga2O3 (2¯01) || Al2O3 (0001). The average transmittance of the films in the visible wavelength range exceeded 90% and the optical band gap of the films varied from 4.93 to 5.11 eV which were observed by spectrophotometer.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
