Abstract
Germanium n-type single crystals with a donor concentration of 3×1012 cm−3 were deformed at 760°C to strains of δ≤71% with a rate of 6×10−3 s−1, cooled to room temperature, and then annealed for t≤20 h at 900°C. Low-temperature static electrical conductivity due to holes trapped by dislocations and transported along a branching dislocation network was measured before and after annealing of the deformed samples. It was found that annealing enhances the dislocation-related electrical conductivity in the samples with δ 60%. Selective etching and X-ray diffraction analysis showed that the main structural distinction of the samples with δ>60% is the presence of recrystallized regions. The influence of annealing on dislocation-related electrical conductivity is explained by an increase in connectedness of the dislocation network for δ 60%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.