Abstract
Germanium n-type single crystals with a donor concentration of 3×1012 cm−3 were deformed at 760°C to strains of δ≤71% with a rate of 6×10−3 s−1, cooled to room temperature, and then annealed for t≤20 h at 900°C. Low-temperature static electrical conductivity due to holes trapped by dislocations and transported along a branching dislocation network was measured before and after annealing of the deformed samples. It was found that annealing enhances the dislocation-related electrical conductivity in the samples with δ 60%. Selective etching and X-ray diffraction analysis showed that the main structural distinction of the samples with δ>60% is the presence of recrystallized regions. The influence of annealing on dislocation-related electrical conductivity is explained by an increase in connectedness of the dislocation network for δ 60%.
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