Abstract

A correlation between magnetoresistance and magnetic properties of as-deposited and annealed Cu/Co multilayers, produced by magnetron sputtering, has been discussed. Two models have been proposed to describe the shapes of magnetoresistance and magnetization hysteresis loops: one taking into account the multidomain structure of the layers and another based on dissimilar magnetic properties of the Fe buffer layer and Co layers. A difference between the initial magnetoresistance and the hysteresis peak as a function of the annealing temperature has been explained in terms of magnetization processes. The annealing treatments of the films with 2.2-nm Cu spacer at temperatures between 300 and 340°C increased the magnetoresistance hysteresis peak to 43% compared to 30–35% for the as-deposited samples. This value remained high even after 1-h annealing at 380°C and the GMR at room temperature decreased only by 27% compared to the low temperature one.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.