Influence of annealing conditions on tripe-layer TiO2/Si3N4/SiO2 antireflection coatings for GaAs solar cells

Abstract

In this work, TiO2/SiO2/Si3N4 triple-layer antireflection coatings (TLARC) were prepared on GaAs substrate by RF sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD). Influence of annealing conditions on the structure and optical properties of TLARC were also investigated. The structure and optical proprieties were analyzed by Grazing Incidence Angle X-ray Diffraction (GIXRD) Fourier Transform Infrared Spectroscopy (FT-IR), Atomic Force Microscopy and UV-VIS spectroscopy. The experimental results were summarized as follows: diffraction peaks of SiO2, Si3N4 and TiO2 respectively appeared in the as-deposited status, and after annealing, new diffraction peak at 25.2° corresponds to TiO2 was confirmed by checking out PDF cards; Stretching vibration of Ti=O, Si-O-Si and N-Si-N was confirmed by FT-IR spectrum; The average reflectance of the TLARC after annealing at 750 °C and holding for 5 min reached the lowest value, which was approximately 7.84 %.