Abstract
The oxidation, organic decomposition, and grain growth of Cu nanoparticles were systematically investigated under various heat-treatment conditions to understand the correlation between the heat-treatment condition and the electrical conductivity of nanoparticle-based copper films. The resistivity of Cu films annealed at 400°C in N2 gas was ∼3 × 102μΩ·cm, which is two orders lower than that of a Cu film annealed in a reducing gas (∼104μΩ·cm). The lowest resistivity of 9 μΩ·cm was achieved at an annealing temperature of 600°C in N2 gas. The N2 atmosphere containing a fairly small amount of O2 was found to remove residual organics easily and facilitate the grain growth of Cu nanoparticles, thereby yielding Cu films with superior electrical conductivity. These results clearly demonstrate the importance of precise control of oxygen during the annealing process.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
