Abstract
Thin films of Zn 2SiO 4:Tb 3+ or Eu 3+ were deposited on silicon wafers by a sol–gel method. The films exhibited prominent green or red photoluminescence, due to the sharp and strong intra-4f n -shell electronic transitions. The thermogravimetric analysis curve shows a remarkable weight loss in the temperature range 50–400 ° C , and a slow loss at higher temperature. The increases in fluorescence intensity and decay lifetimes of rare-earth ions sensitive to microstructure and chemical components are attributed to OH removal, nano-crystallite formation and the increased surface roughness by treatment of temperature. Strongly enhanced photoluminescence was observed in samples annealed at 950 °C in a nitrogen atmosphere.
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