Abstract
A study was made of the spectral characteristics of GaInAsP/InP double-heterostructure injection lasers (λ~1.08–1.61μ, 300K) as a function of pressure under uniaxial compression allowing for internal residual stresses in the active layer. The shear constants of the deformation potential of the valence band b= –2.0±0.1eV, b'=1.0±0.1eV and the constant of the deformation potential for the variation of the band gap α= –10.6±0.5 eV were determined for a quaternary compound corresponding to the ~1.3μ wavelength. Mechanisms responsible for the influence of deformation on the radiative characteristics of GaInAsP/InP heterojunction lasers are discussed.
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