Abstract
The phase transformation behavior and resulting dielectric properties of sol-gel derived TiO 2 thin films were investigated. Thin films showed a typical behavior of mixture systems during the phase transformation; a kinetic investigation on the isothermal curve of pre-crystallized thin films revealed that the phase transformation was a first-order reaction with an Avrami time component of 1. Dielectric constants of TiO 2 thin films increased with the increasing amount of the rutile phase while the dielectric losses showed the opposite relationship. From a fitting process using the parallel mixing rule, dielectric constants of two end members of the mixture system were calculated to be 41.4 and 145.2 for the pure anatase and rutile phase thin films, respectively.
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