Abstract
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this growth scheme has achieved a great success in the growth of III-nitride LEDs on c-plane substrates, but has not yet been applied in the growth of any other orientated III-nitride LEDs. In this paper, we have applied this growth scheme in the growth of semi-polar (11–22) green LEDs, and have investigated the impact of the SLS pre-layer on the optical performance of semi-polar (11–22) green LEDs grown on patterned (113) silicon substrates. Our results demonstrate that the semi-polar LEDs with the SLS pre-layer exhibit an improvement in both internal quantum efficiency and light output, which is similar to their c-plane counterparts. However, the performance improvement is not so significant as in the c-plane case. This is because the SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not the c-plane case, which act as non-radiative recombination centres.
Highlights
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED)
This demonstrates that the insertion of the superlattice structure (SLS) pre-layer enhances the internal quantum efficiency (IQE) of the semi-polar LED by a factor of 1.8
This paper has systematically investigated the influence of an InGaN/GaN SLS pre-layer inserted prior to the growth of the InGaN/GaN MQWs of a semi-polar [11,12,13,14,15,16,17,18,19,20,21,22] LED on patterned Si [113] on the optical performance
Summary
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). III-nitride LDs with reasonably good performance and long life-time can only be obtained by homoepitaxial growth on GaN substrates or templates It is well-known that it is crucial to insert a single InGaN underlayer or an InGaN/GaN superlattice structure (SLS) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) as an emitting region in an LED. All the research on this issue is restricted to III-nitride LEDs on c-plane substrates
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