Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots.

Vladimir D Krevchik,Paweł Komada,Saygid U Uvaysov,Vladimir P Kulagin,Aleksei V Razumov,Aisha Mussabekova,Saule Smailova,Mikhail B Semenov

doi:10.3390/s22041300

Abstract

The effect of an external electric field and dissipative tunneling on the spectral intensity of recombination radiation in a quantum dot with an A+ + e impurity complex (a hole localized on a neutral acceptor interacting with an electron localized in the ground state of the quantum dot) is studied in the zero-radius potential model in the adiabatic approximation. The probability of dissipative tunneling of a hole is calculated in the one-instanton approximation. A high sensitivity of the recombination radiation intensity to the strength of the external electric field and to such parameters of the surrounding matrix (dissipative tunneling parameters) as temperature, the constant of interaction with the contact medium (or the heat-bath), and the frequency of phonon modes, has been revealed. It is shown that an external electric field leads to a shift of the recombination radiation threshold by several tens of meV, and a change in the parameters of dissipative tunneling has a noticeable effect on the spectral intensity of recombination radiation. It is shown that the resonant tunneling effect manifests itself in the form of “dips” in the field dependence of the spectral intensity of recombination radiation, which occur at certain values of the external electric field strength and temperature. This opens up certain prospects for the use of the considered system “quantum dot—impurity complex A+ + e” under conditions of dissipative tunneling for the study and diagnostics of biological objects.

Highlights

As is known, quantum technologies are currently a priority direction in the development of sensors
Within the framework of the zero-radius potential model in the adiabatic approximation in combination with the one-instanton method, an analytical solution of the problem for bound states of a hole localized at a neutral acceptor interacting with an electron localized in the ground state of a spherically symmetric quantum dot in the presence of dissipative tunneling in an external electric field has been obtained
The solution of this problem made it possible to calculate in the dipole approximation the field dependence of the intensity of recombination radiation associated with the optical transition of an electron from the ground state of a quantum dot to the quasi-stationary state of the A+ - center

Summary

Introduction

Quantum technologies are currently a priority direction in the development of sensors. ; at the Physico-technical Institute named by A.F. Ioffe, RAS, the fundamental problem of detecting weak magnetic fields with nm—resolution has been solved. . Nanocrystals of a given polytype have been created, which can be combined with confocal and probe microscopy, resulting in atomic spatial resolution”. RAS, the fundamental problem of detecting weak magnetic fields with nm—resolution has been solved. Research in this field, in particular, based on quantum dots with impurity complexes in the external control electric field, is undoubtedly a topical area of research in the field of modern optoelectronics. An important factor that significantly determines the optical response of quantum dots, in addition to the external electric field, is the influence of the surrounding matrix within the framework of the dissipative tunneling mechanism [1,2,3,4]

Objectives

Results

Conclusion