Abstract
GaN nanowires (NWS) were synthesized at different temperatures by ammoniating Ga2O3/Co films deposited on Si (111) substrate. X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM), Fourier transformed infrared spectra (FTIR) and photoluminence (PL) spectra were used to characterize the influences of the ammoniating temperature on the morphology, crystallinity and optical properties of GaN NWS. Our results indicate that the samples are all of wurtzite structure and also show that the GaN NWS ammoniated at 950 °C have the best morphology and crystallinity with a single-crystalline structure, and at this temperature the PL spectrum with the strongest ultraviolet (UV) peak is observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
