Abstract
The silicon carbide cubic polytype (3C-SiC) is perfectly appropriate to fabricate microelectromechanical systems. However, for such applications, the stress can largely influence both the fabrication of 3C‑SiC‑based microsystems and their related mechanical properties. Accordingly, in this study, we investigated the influence of strong aluminum incorporation towards the mechanical properties of 3C-SiC epilayers grown on silicon substrates.
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