Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Abstract

The effects of AlN overgrowth on the structural properties of GaN nanostructures (quantum wells and quantum dots) grown by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy, transmission electron microscopy, and reflection high-energy electron diffraction. The capping process induces a remarkable change in the dimensions of the nanostructures. The overgrowth process implies a thinning of the GaN quantum well and an isotropic reduction of the GaN island size. We demonstrate that this thickness/size reduction affects only the top GaN/AlN interface. The phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures. We also demonstrate that this exchange is thermally activated and depends on the strain state of the nanostructures.