Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Abstract

A study of metal‐organic chemical vapor deposition (MOCVD) grown AlN nucleation layer (NL) on breakdown characteristics for GaN‐on‐Si is presented. It is widely believed that AlN NL can act as an insulator because of its large band gap ∼6.2 eV. On contrary, this study of AlN NL/Si reveals conductive nature and shows high vertical leakage. The structural examinations along with electrical characterization show AlN NL/Si quality depends on the growth temperature. The surface morphology and presence of unintentional oxygen impurities govern the vertical leakage of AlN NL/Si. Interestingly, the AlN NL influences the growth of subsequent epitaxial layers as well as their vertical breakdown voltages (BVs). Further, it is found that AlGaN intermediate layer and multipairs of AlGaN/AlN strained layer superlattice (SLS) grown over AlN NL with better surface properties enhances the vertical BV. A high BV of 1.3 kV is achieved for SLS multipairs with a total thickness of 4.4 μm and the translated breakdown field strength is 2.8 MV cm−1 for MOCVD grown GaN‐on‐Si.