Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Abstract

Investigations were conducted to explore the effect of Al 0.3Ga 0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2Ga 0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3Ga 0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2Ga 0.8N/GaN MQW LED structures enables the improved LED performance.