Abstract
The ternary Al2xIn2−2xO3 films with different Al contents of x [Al/(Al+In) atomic ratio] have been fabricated on the Y-stabilized ZrO2 (111) substrates by metal organic chemical vapor deposition at 700°C. The structural, electrical and optical properties of the films as a result of different Al contents (x=0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In2O3 structure with a single orientation along (111) to the amorphous structure was observed. The minimum resistivity of 4.7×10−3Ωcm, a carrier concentration of 1.4×1020cm−3 and a Hall mobility of 9.8cm2v−1s−1 were obtained for the sample with x=0.2. The average transmittances for the Al2xIn2−2xO3 films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8eV.
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