Abstract
AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transitions in the temperature range of 2 K to 300 K were investigated. The photoluminescence data obtained give clear evidence of the influence of the aluminum concentration on the temperature dependence of excitonic transitions in the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Vi na et al. [Phys. Rev. B 30, 1979 (1984)] and Passler [Phys. Stat. Sol. (b) 200, 155 (1997)] models were used to fit the experimental points.
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