Abstract
Aluminum-doped zinc oxide (AZO) was cosputtered from ZnO and Al targets on glass substrates at room temperature. The effect of Al-target power and annealing atmosphere on structural and optoelectronic properties of AZO films was investigated.[Al]/[Zn] ratio increased to 0.258 when the Al-target power increased to 250 W. At a fixed Al-target power of 200 W, the [Al]/[Zn] ratio was 0.104 and the as-deposited AZO film demonstrated a low resistivity of 3.19 × 10−4 Ω-cm and high transmittance of approximately 90% in the visible region. After annealing at 500 °C in forming gas (5% H2 in Ar) atmosphere, the resistivity of the AZO film can be further reduced to 9.38 × 10−5 Ω-cm. Given its low-temperature process and good optoelectronic properties, sputtered AZO films that use ZnO and Al targets have high potential in various optoelectronic devices.
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