Abstract
Highly conducting aluminum-doped ZnO (30nm)/Ag (5–15nm)/aluminum-doped ZnO (30nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400nm with the Ag layer thickness of 10nm. The resistivity is 3.71×10−4Ω-cm, which can be decreased to 3.8×10−5Ω-cm with the increase of the Ag layer thickness to 15nm. The Haacke figure of merit has been calculated for the films with the best value being 8×10−3Ω−1. It was shown that the multilayer thin films have potential for applications in optoelectronics.
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