Abstract
Results of investigations are presented of the THz spectra of the refractive index n(v) and of the extinction coefficient k(v) for ZnGeP2 single crystals with different degrees of technological treatment – after growth by the vertical Bridgman technique, after heat treatment at temperatures above the Debye temperature for the highest-frequency phonons, and after modification of the single-crystal properties under irradiation by fast electrons (~4 MeV).
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