Abstract
We have carried out the numerical simulation for DS system for growing multi-crystalline silicon (mc-Si) ingot with different size additional insulation blocks. Thermal Stress, melt-crystal interface shape and dislocation density are the main factors that can determine the efficiency of solar cells. Thermal stress and dislocation density can be controlled by controlling the heat dissipation from the crucible. The simulation results revealed that the effective controll of melt-crystal interface shape has been obtained by the suitable additional insulation block in DS system. At particular size of insulation block (3 cm) the optimal melt-crystal interface shape, von Mises stress, Maximum shear stress and maximum principal stress have been established during the solidification process which can enhace the mc-Si ingot quality, for photovoltaic application.
Published Version
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