Abstract
The accelerated crucible rotation technique (ACRT) was used in the directional solidification of metallurgical grade silicon. With ACRT a significantly larger fraction of the ingot could be solidified before interface breakdown occurred. After breakdown, the grain structure was dendritic and impurity segregation greatly reduced. Silicon carbide particle incorporation was extremely erratic and was unaffected by ACRT, presumably because the bouyancy-driven natural convection is sufficient to suspend the particles. Particle trapping increased enormously when morphological breakdown occured. The critical freezing rate of pushing of SiC platelets is below 6 mm/h.
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