Influence of a magnetic field on an exciton bound to an ionized donor impurity inGaAs/Ga1−xAlxAsandCdTe/Cd1−xZnxTesemiconductor quantum wells

Abstract

The influence of an external uniform magnetic field applied along the growth axis on the ground-state energy of an exciton bound to an ionized donor impurity in a semiconductor quantum well with finite potential barriers is investigated. The binding energy of the complex is calculated variationally within the envelope-function approximation as a function of the well width for arbitrary intensity of the field. The results show that the magnetic field enhances the correlation energy of the complex in the cases of ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}}_{1\ensuremath{-}x}{\mathrm{Al}}_{x}\mathrm{As}$ and the ${\mathrm{C}\mathrm{d}\mathrm{T}\mathrm{e}/\mathrm{C}\mathrm{d}}_{1\ensuremath{-}x}{\mathrm{Zn}}_{x}\mathrm{Te}$ quantum wells. The influence of the magnetic field and the quantum confinement on the stability against dissociation is also discussed.