Abstract
Perpendicular magnetic tunnel junctions (pMTJs) with a CoFeB/W/CoFeB/MgO composite free layer are experimentally investigated. Magnetic anisotropy and tunneling magnetoresistance (TMR) are determined as functions of ferromagnetic (CoFeB) and capping (MgO) layer thicknesses using the ferromagnetic resonance technique. In pMTJs fabricated into 130 and 150-nm diameters, the TMR ratio > 160% and the thermal stability factor Δ > 60 are measured for the MgO capping layer thickness of tMgO ≥ 1 nm. The voltage vs. magnetic field stability diagram indicates field-free current induced switching with voltages |VS|<0.5 V.
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