Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films.

Fengbo Han,Yadan Li,Chuantao Zheng,Ran Bi,Wenyuan Zhao,Yiding Wang,Feng Tian

doi:10.3390/ma13010113

Fengbo Han, Yadan Li + Show 5 more

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https://doi.org/10.3390/ma13010113

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Abstract

Transparent conductive IWO/Cu/IWO (W-doped In2O3) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron–manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10−4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.

Highlights

Transparent conductive oxides (TCOs) are intrinsic n-type semiconductors with an inherent natural donor of oxygen vacancies and additional external doping of interstitial atoms [1,2]
Due to the remarkable optical and electrical properties, doped TCO layers are integrated into many optoelectronic devices, which are widely used in photovoltaic solar cells [11,12,13], flat panel displays [14,15,16], photoelectric sensors [17], and film transistors [18,19,20]
(13.56 MHz) magnetron sputtering under a pressure of 0.2 Pa of high purity Ar atmosphere with 25 sccm at room temperature, and an intermediate Cu layer was prepared by direct current (DC) magnetron sputtering

Summary

Introduction

Transparent conductive oxides (TCOs) are intrinsic n-type semiconductors with an inherent natural donor of oxygen vacancies and additional external doping of interstitial atoms [1,2]. TCOs usually consist of transition metal cations (called TCO cations) because the powerful delocalized s orbitals of these cations form a dispersed conduction band. Their effective electron mass is very small, which assures high mobility and a wide band gap [3], such as In3+ [4,5], Zn2+ [6,7,8], and. It is still a big challenge to optimize the optoelectronic properties of the film by balancing the excellent electrical conductivity and high optical transmittance to maintain the extremely small optical absorption and reflection and high carrier concentration [21]. As the doping level decreases, the film can achieve relatively high transparency in the infrared range

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