Influence de l'état de la surface sur les propriétés optiques de couches minces de silicium amorphe hydrogéné déposées par “glow discharge”

Abstract

Diffuse and specular reflectance and transmittance measurements in the energy range 0.5–5.5 eV were performed on glow discharge hydrogenated amorphous silicon films annealed separately at temperatures varying from 20 to 600 °C. These measurements indicate that photons with energies greater than 2 eV are scattered to some extent by the films. The presence of scattering through surface roughness must be taken into account to compare the variations in the static refractive index with annealing temperature T r and measurement temperature T m and to apply the Bahl and Baghat relation.